TSMC Reveals a Major Breakthrough Process coming to their 2024 2nm Processors that will Power Future Apple Devices
Last Wednesday Patently Apple posted a report titled "Samsung Vows to overtake TSMC's Chip Business by 2022 and Aims to Win back Apple's chip Business." The report noted that Samsung’s aim is in line with TSMC’s target of offering volume production of 3nm chips in the second half of 2022. Though Samsung also hopes to go one better by adopting what’s known as the Gate-All-Around technique, regarded by some as game-changing technology that can more precisely control current flows across channels, shrink chip areas and lower power consumption. TSMC had opted for the more established FinFET structure for its 3nm lines."
Of course TSMC wasn't going to let Samsung get away with that announcement and has countered it in a new Taiwanese report which states that "TSMC has made a major internal breakthrough in the 2nm process. It is optimistic that the 2nm process is expected to undergo risky trial production in the second half of 2023, and it can enter volume in 2024. Production stage.
TSMC also stated that the 2nm breakthrough will once again widen the gap with competitors, while continuing Moore's Law and continuing to advance the research and development of 1nm process."
So what is this "breakthrough"? In the 2nm process, TSMC will abandon the FinFET (Fin Field Effect Transistor) that has lasted for many years, and even not use the GAAFET (Surround Gate Field Effect Transistor) that Samsung plans to use on the 3nm process, that is, nanowire (nanowire), but Expand it into "MBCFET" (Multi-Bridge Channel Field Effect Transistor), that is, nanosheet based instead of nanowire as presented in the image below.
From GAAFET to MBCFET, from nanowire to nanosheet, it can be regarded as a leap from two-dimensional to three-dimensional, which can greatly improve circuit control and reduce leakage rate.
TSMC predicts that Apple, Qualcomm, NVIDIA, AMD and other customers are expected to take the lead in adopting its 2nm process.