While Samsung advances HBM3E validation with key clients like NVIDIA, it is also targeting the next-gen mobile DRAM market. According to Korean site The Bell, Samsung is developing Low Power Wide I/O (LPW) DRAM with multiple partners. The report specifically noted that it was confirmed that Apple is among them.

The Bell indicates that Samsung expects LPW DRAM mass production to begin in 2028. Besides Apple, the memory giant is also working with other SoC customers on LPW DRAM development, with its own Mobile eXperience (MX) division among the partners, as noted in the report.

As per The Bell, stacking low-power DDR enables LPW DRAM, also touted as mobile DRAM, to deliver higher performance. However, unlike HBM, it does not incorporate a base die for logic functions.

Notably, with the rise of on-device AI, SK hynix is developing a similar technology called “Vertical Fan-Out (VFO),” targeting mobile applications, the report suggests.

A previous Business Korea report mentioned that the two memory giants are teaming up on “Low Power Double Data Rate 6 (LPDDR6)-Processing In Memory (PIM)” products, as they try to formulate plans for the standardization timeline with the Joint Electron Device Engineering Council (JEDEC).

Samsung’s latest datasheet, cited by The Bell, shows LPW DRAM reaching 204.8GB/s I/O speed while consuming just 1.87pJ—significantly more efficient than LPDDR5X.